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AT45DB321C
10. Electrical Specifications
Table 10-1.
Absolute Maximum Ratings*
Temperature under Bias ............................... -55 ° C to +125 ° C
Storage Temperature .................................... -65 ° C to +150 ° C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V CC + 0.6V
Table 10-2.
DC and AC Operating Range
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
AT45DB321C
Operating Temperature (Case)
V CC Power Supply (1)
Com.
Ind.
0 ° C to 70 ° C
-40 ° C to 85 ° C
2.7V to 3.6V
Note:
1. After power is applied and V CC is at the minimum specified datasheet value, the system should wait 20 ms before an opera-
tional mode is started.
Table 10-3.
DC Characteristics
Symbol
I SB (1)
I CC1 (2)(3)
I CC2
I CC3
I CC4
I LI
I LO
Parameter
Standby Current
Active Current, Read
Operation, Serial Interface
Active Current, Program
Operation, Page Program
Active Current, Page Erase
Operation
Active Current, Block Erase
Operation
Input Load Current
Output Leakage Current
Condition
CS, RESET, WP = V IH , all
inputs at CMOS levels
f = 20 MHz; I OUT = 0 mA;
V CC = 3.6V
V CC = 3.6V
V CC = 3.6V
V CC = 3.6V
V IN = CMOS levels
V I/O = CMOS levels
Min
Typ
6
10
35
30
30
Max
15
15
50
40
40
1
1
Units
μA
mA
mA
mA
mA
μA
μA
V IL
V IH
Input Low Voltage
Input High Voltage
V CC x 0.7
V CC x 0.3
V
V
V OL
V OH
Output Low Voltage
Output High Voltage
I OL = 1.6 mA; V CC = 2.7V
I OH = -100 μA
V CC - 0.2V
0.4
V
V
Notes:
1. I SB maximum specification limit is tested at 3.3V and 70 ° C.
2. I CC1 during a buffer read is 30 mA maximum.
3. I CC1 changes typically by 300 μA per 1 MHz change in clock frequency.
4. All inputs are 5 volts tolerant.
21
3387M–DFLASH–2/08
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